High-Q-value low-temperature-drift low-K ceramic filter material and preparation method thereof

The invention provides a high-Q-value low-temperature-drift low-K ceramic filter powder material and a preparation method thereof, and belongs to the field of electronic ceramic materials. The chemical general formula of the ceramic filter material provided by the invention is (1-x) SiO2-xMg2SiO4, x...

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Bibliographische Detailangaben
Hauptverfasser: KONG LINGBING, ZHU BING, XU JIWEN, ZHANG TAIYUN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a high-Q-value low-temperature-drift low-K ceramic filter powder material and a preparation method thereof, and belongs to the field of electronic ceramic materials. The chemical general formula of the ceramic filter material provided by the invention is (1-x) SiO2-xMg2SiO4, x is equal to 0.05-0.30, and the ceramic filter material comprises trace doping components such as Bi2O3, CuO and the like. The high-Q-value low-temperature-drift low-K ceramic filter powder material is formed by controlling and adjusting the preparation composition, and the dielectric constant of the high-Q-value low-temperature-drift low-K ceramic filter powder material is continuously adjustable between 4 and 5. 本发明提供一种高Q值低温漂低K陶瓷滤波器粉体材料及其制备方法,属于电子陶瓷材料领域。本发明提供的陶瓷滤波器材料化学通式为:(1-x)SiO2-xMg2SiO4,其中,x=0.05-0.30,并包括Bi2O3、CuO等微量掺杂成分。通过制备组成的控制和调节以形成一种高Q值低温漂低K陶瓷滤波器粉体材料,其介电常数在4~5之间连续可调。