Method for directionally cutting silicon carbide by monomer

The invention discloses a method for directionally cutting silicon carbide by a single body, which relates to the technical field of silicon carbide cutting and is characterized in that each cut crystal is respectively oriented and then cut, so that the angle of the cut wafer is controllable, the requirements of customers are met after cutting processing, and different angle requirements of multiple customers can be simultaneously met by one saw. The method for directionally cutting the silicon carbide by the single body comprises the following steps of: after crystal directional processing, adhering the single crystal to a small tray carrier, putting the small tray carrier into multi-wire cutting equipment, and after fixing, using a dial indicator to meter the end surface of the single crystal to determine transverse and longitudinal angle deviations; if the deviation has a problem, adjusting the fixing device and enabling the reading of the dial indicator to reach a required range; and if the deviation has