Inverter phase switch with high side and low side MOSFET resistance diversity

The invention discloses an inverter phase switch with high side and low side MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) resistance diversity. One or more embodiments are provided for an inverter. The inverter includes a phase switch configured to supply AC power via an output termina...

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Bibliographische Detailangaben
Hauptverfasser: HALLMAN MICHAEL C, BURNS WILLIAM A, OTTO JEFFREY M
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses an inverter phase switch with high side and low side MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) resistance diversity. One or more embodiments are provided for an inverter. The inverter includes a phase switch configured to supply AC power via an output terminal. The phase switch includes a high side leg and a low side leg. The high-side leg includes a high-side solid-state switch configured to selectively conduct current between the high-side conductor of the DC bus and the output terminal, and the low-side leg includes a low-side solid-state switch configured to selectively conduct current between the output terminal and the low-side conductor of the DC bus. The high-side solid-state switch has a first on-state resistance value and the low-side solid-state switch has a second on-state resistance value different from the first on-state resistance value. A shunt resistor may be connected in series with a corresponding one of the high-side solid-state switches or the low-