Semiconductor device

A semiconductor device is disclosed. The semiconductor device includes: a semiconductor substrate including a first region and a second region; a first interlayer insulating layer on the second region; a cap layer disposed on the first interlayer insulating layer, the upper surface of the cap layer including a first trench; conductive patterns spaced apart on the cap layer, side surfaces of the conductive patterns being aligned with inner side surfaces of the first trenches; and a peripheral separation pattern disposed in the first trench to cover a side surface of the conductive pattern. The peripheral separation pattern has a first thickness on a side surface of the conductive pattern, and has a second thickness greater than or equal to the first thickness on a lower surface of the first trench. 公开了一种半导体装置。所述半导体装置包括：半导体基底，包括第一区域和第二区域；第一层间绝缘层，位于第二区域上；盖层，设置在第一层间绝缘层上，盖层的上表面包括第一沟槽；导电图案，在盖层上间隔开，导电图案的侧表面与第一沟槽的内侧表面对齐；以及外围分离图案，设置在第一沟槽中以覆盖导电图案的侧表面。外围分离图案在导电图案的侧表面上具有第一厚度，并且在第一沟槽的下表面上具有大于或等于第一厚度的第二厚度。