Cleaning formulations
A composition useful for removing residues from a semiconductor substrate, the composition comprising, in effective cleaning amounts: about 55 to 80 wt% water; from about 0.3 to about 5.0 wt% EDTA; from about 10.0 to about 30.0% by weight of an amine compound, wherein the amine compound is selected...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A composition useful for removing residues from a semiconductor substrate, the composition comprising, in effective cleaning amounts: about 55 to 80 wt% water; from about 0.3 to about 5.0 wt% EDTA; from about 10.0 to about 30.0% by weight of an amine compound, wherein the amine compound is selected from the group consisting of secondary amines, tertiary amines, and mixtures thereof; from about 0.1 to about 5.0 wt% of a polyfunctional organic acid; from about 0.01 to about 8.0 wt% of a source of fluoride ions; from about 0 to about 60% by weight of a water-miscible organic solvent; and from about 0 to about 15% by weight of a corrosion inhibitor.
一种可用于从半导体衬底去除残留物的组合物,所述组合物包含有效清洁量的:约55至80重量%的水;约0.3至约5.0重量%的EDTA;约10.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;约0.1至约5.0重量%的多官能有机酸;约0.01至约8.0重量%的氟离子源;约0至约60重量%的水混溶性的有机溶剂;和约0至约15重量%的腐蚀抑制剂。 |
---|