TSV processing window and fill performance through long pulsing and ramping

A method of electroplating metal into features of a partially fabricated electronic device on a substrate having a high open region portion is provided. The method includes initiating a body electrical filling phase with a pulse at a high current level; reducing the current to a baseline current level; and optionally increasing the current in one or more steps until the electroplating is completed. 提供了一种在具有高打开区域部分的衬底上将金属电镀到部分制造的电子器件的特征中的方法。该方法包括用高电流电平下的脉冲启动主体电填充阶段；将电流降低到基线电流水平；并且可选地以一个或多个步骤增加电流直到电镀完成。