High-speed 3D metal printing of semiconductor metal interconnects
A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are disposed on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid apertures has one end between the pl...
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| creator | MAYER STEVEN T |
| description | A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are disposed on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid apertures has one end between the plurality of anodes. A plurality of control devices are configured to selectively supply current to the plurality of anodes, respectively. The anode substrate is disposed within a second predetermined gap of a workpiece substrate comprising a metal seed layer. A ratio of the second predetermined gap to the first predetermined gap is in a range from 0.5: 1 to 1.5: 1. The array controller is configured to use a corresponding one of the plurality of control devices to energize a selected one of the plurality of anodes when an electrolyte solution is supplied through the first plurality of fluid apertures between the anode substrate and the workpiece substrate.
一种在衬底上打印金属互连件的系统包含阳极衬底。多个阳极被布置于所述阳极衬底的一侧上，其中在所述多个阳极的相邻者之间具有第 |
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一种在衬底上打印金属互连件的系统包含阳极衬底。多个阳极被布置于所述阳极衬底的一侧上，其中在所述多个阳极的相邻者之间具有第</description><language>chi ; eng</language><subject>ADDITIVE MANUFACTURING TECHNOLOGY ; ADDITIVE MANUFACTURING, i.e. MANUFACTURING OFTHREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVEAGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING,STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PERFORMING OPERATIONS ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220819&DB=EPODOC&CC=CN&NR=114929943A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220819&DB=EPODOC&CC=CN&NR=114929943A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAYER STEVEN T</creatorcontrib><title>High-speed 3D metal printing of semiconductor metal interconnects</title><description>A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are disposed on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid apertures has one end between the plurality of anodes. A plurality of control devices are configured to selectively supply current to the plurality of anodes, respectively. The anode substrate is disposed within a second predetermined gap of a workpiece substrate comprising a metal seed layer. A ratio of the second predetermined gap to the first predetermined gap is in a range from 0.5: 1 to 1.5: 1. The array controller is configured to use a corresponding one of the plurality of control devices to energize a selected one of the plurality of anodes when an electrolyte solution is supplied through the first plurality of fluid apertures between the anode substrate and the workpiece substrate.
一种在衬底上打印金属互连件的系统包含阳极衬底。多个阳极被布置于所述阳极衬底的一侧上，其中在所述多个阳极的相邻者之间具有第</description><subject>ADDITIVE MANUFACTURING TECHNOLOGY</subject><subject>ADDITIVE MANUFACTURING, i.e. MANUFACTURING OFTHREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVEAGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING,STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD0yEzP0C0uSE1NUTB2UchNLUnMUSgoyswrycxLV8hPUyhOzc1Mzs9LKU0uyS-CygNlU4uAgnmpySXFPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7Uk3tnP0NDE0sjS0sTY0ZgYNQDmNzG1</recordid><startdate>20220819</startdate><enddate>20220819</enddate><creator>MAYER STEVEN T</creator><scope>EVB</scope></search><sort><creationdate>20220819</creationdate><title>High-speed 3D metal printing of semiconductor metal interconnects</title><author>MAYER STEVEN T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114929943A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>ADDITIVE MANUFACTURING TECHNOLOGY</topic><topic>ADDITIVE MANUFACTURING, i.e. MANUFACTURING OFTHREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVEAGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING,STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MAYER STEVEN T</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAYER STEVEN T</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High-speed 3D metal printing of semiconductor metal interconnects</title><date>2022-08-19</date><risdate>2022</risdate><abstract>A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are disposed on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid apertures has one end between the plurality of anodes. A plurality of control devices are configured to selectively supply current to the plurality of anodes, respectively. The anode substrate is disposed within a second predetermined gap of a workpiece substrate comprising a metal seed layer. A ratio of the second predetermined gap to the first predetermined gap is in a range from 0.5: 1 to 1.5: 1. The array controller is configured to use a corresponding one of the plurality of control devices to energize a selected one of the plurality of anodes when an electrolyte solution is supplied through the first plurality of fluid apertures between the anode substrate and the workpiece substrate.
一种在衬底上打印金属互连件的系统包含阳极衬底。多个阳极被布置于所述阳极衬底的一侧上，其中在所述多个阳极的相邻者之间具有第</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | ADDITIVE MANUFACTURING TECHNOLOGY ADDITIVE MANUFACTURING, i.e. MANUFACTURING OFTHREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVEAGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING,STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PERFORMING OPERATIONS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | High-speed 3D metal printing of semiconductor metal interconnects |
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