Semiconductor structure, semiconductor device and manufacturing method thereof

The semiconductor device includes a channel layer, a source/drain contact, and a first barrier liner. The channel layer includes an oxide semiconductor material. A source/drain contact is disposed in electrical contact with the channel layer. First barrier pads surround the source/drain contacts, re...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VON DAHL MARCO, MA LIXIU, DORBOS, HERB, VELIANNIDIS, GEORGIOS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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