Semiconductor structure, semiconductor device and manufacturing method thereof

The semiconductor device includes a channel layer, a source/drain contact, and a first barrier liner. The channel layer includes an oxide semiconductor material. A source/drain contact is disposed in electrical contact with the channel layer. First barrier pads surround the source/drain contacts, respectively, and include a hydrogen barrier material to prevent hydrogen from diffusing through the first barrier pads to the channel layer. The embodiment of the invention also relates to a semiconductor structure and a method for manufacturing the semiconductor device. 半导体器件包括沟道层、源极/漏极接触件和第一阻挡衬垫。沟道层包括氧化物半导体材料。源极/漏极接触件设置为与沟道层电接触。第一阻挡衬垫分别围绕源极/漏极接触件，并且包括氢阻挡材料以防止氢通过第一阻挡衬垫扩散至沟道层。本申请的实施例还涉及半导体结构和用于制造半导体器件的方法。