METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus including one or more coils, and a plasma condition of the ECR plasma etching is changed by changing an input current to the one or more coils during etching of the target layer. 在制造半导体器件的方法中，在要蚀刻的目标层上方形成掩模图案，并且通过使用掩模图案作为蚀刻掩模来蚀刻目标层。通过使用电子回旋共振(ECR)等离子体蚀刻装置执行蚀刻，该ECR等离子体蚀刻装置包括一个或多个线圈，并且在蚀刻目标层期间，通过改变到一个或多个线圈的输入电流来改变ECR等离子体蚀刻的等离子体条件。