Electroplating device for filling through hole and TGV/TCV hole metallization method

The invention discloses an electroplating device for filling a through hole and a hole metallization method. According to the device and the hole metallization method, a seed layer does not need to be pre-plated in a through hole, a plurality of wafer plating pieces can be electroplated at the same time, liquid convection can be promoted through a stirring device, transmission of copper ions in the hole is accelerated, meanwhile, the plating pieces are fixed around a plating tank, and the reasonable plating hole size and number are set according to needs. The electroplating device designed by the invention can be used for carrying out a hole filling and copper plating technology on a through hole in a glass, ceramic or resin matrix. According to the conductive backboard component, the electroplated part can be separated from the conductive layer after electroplating is completed. The seed-layer-free process adopted by the technology comprises the steps of wafer preparation, cleaning, laser drilling, cleaning