Microwave dielectric material TmVO4 and preparation method thereof

The invention belongs to the field of electronic ceramics and manufacturing thereof, and provides a microwave dielectric material and a preparation method thereof. The microwave dielectric material is TmVO4, the crystal phase is TmVO4, and the microwave dielectric material belongs to a tetragonal crystal structure. The microwave dielectric material provided by the invention has low dielectric loss at the sintering temperature of 1100-1250 DEG C, the Q * f value is 40000-60000 GHz, the dielectric constant is 11-12, and the temperature coefficient of resonance frequency is-35 to-50 ppm/DEG C. The microwave dielectric material is simple in preparation process, low in production cost and beneficial to industrial production. 本发明属于电子陶瓷及其制造领域，提供一种微波介质材料及其制备方法；所述微波介质材料为TmVO4，晶相为TmVO4，属于四方晶体结构。本发明提供一种微波介质材料在1100～1250℃烧结温度下具有低的介电损耗，Q×f值为40000～60000GHz，介电常数为11～12，谐振频率温度系数为-35～-50ppm/℃。该微波介质材料制备工艺简单、生产成本低，有利于实现工业化生产。