Via formation for memory devices

Methods, systems, and devices for via formation in memory devices are described. A stack of memory cells for a memory array may be formed. In some examples, the stack of memory cells may include a storage component. A through-hole may also be formed in a region outside the memory array, and the through-hole may protrude from a material surrounding the through-hole. A material may then be formed over the stack of memory cells and over the via, and a top surface of the barrier material may be planarized until at least a portion of the via is exposed. The subsequently formed material may in turn be in direct contact with the top of the via, while a portion of the initially formed material may remain over the stack of memory cells. 本发明描述用于存储器装置中的通孔形成的方法、系统和装置。可形成用于存储器阵列的存储器单元堆叠。在一些实例中，所述存储器单元堆叠可包含存储组件。通孔也可形成于处于所述存储器阵列外部的区域中，且所述通孔可从环绕所述通孔的材料突出。材料接着可形成于所述存储器单元堆叠上方以及所述通孔上方，且阻隔材料的顶表面可经平面化直到所述通孔的至少一部分暴露为止。随后形成的材料进而可与所述通孔的顶部直接接触，而初始形成的材料的一部分可保持在所述存储器单元堆叠上方。