Metal-semiconductor contact device structure, manufacturing method and electronic equipment

The invention discloses a structure of a metal semiconductor contact device, a manufacturing method and electronic equipment, and belongs to the technical field of semiconductors. The edge ring structure is located in the substrate; the metal layer covers the substrate and exposes the edge ring structure; wherein the edge ring structure comprises n ion doped well regions; n is a natural number greater than 1; the ith ion doped well region is located in the (i + 1) th ion doped well region; i is a positive integer smaller than n; the metal layer covers the substrate and exposes the edge ring structure, and meanwhile, the edge ring structure comprises n ion doped well regions; the ith ion doped well region is located in the (i + 1) th ion doped well region; therefore, gradually weakened electric field distribution is formed on the edge of the metal layer due to the nested ion-doped well region, and the maximum reverse bias voltage and the reliability of the device are improved. 一种金半接触器件的结构、制造方法及电子设备，属于半导体技术领域，通