High-performance ferroelectric tunnel junction based on quantum effect and preparation method thereof

The invention relates to a high-performance ferroelectric tunnel junction based on a quantum effect and a preparation method thereof. The invention discloses a high-performance ferroelectric tunnel junction and a preparation method thereof. The high-performance ferroelectric tunnel junction comprises an oxide layer and a channel layer which are arranged on a substrate from bottom to top; the upper surface of the channel layer is provided with a vertical structure formed by alternately stacking insulating dielectric layers and diversion layers, each diversion layer is provided with an exclusive contact hole, and the contact hole is filled with an electrode; the vertical structure is provided with a groove, and the groove is sequentially filled with a ferroelectric layer, a semiconductor layer and an electrode layer from the inner wall to the center of the groove. On one hand, the device density is greatly improved through the compatibility of the three-dimensional integration technology, and the quantum effect