Preparation method of two-dimensional material with strong room-temperature ferromagnetism

The invention discloses a preparation method of a two-dimensional material with strong room-temperature ferromagnetism, which comprises the following steps: adhering block crystal ReS2 to a first adhesive tape, stripping to obtain a first adhesive tape with a ReS2 layer, adhering a second adhesive t...

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Bibliographische Detailangaben
Hauptverfasser:	QIAN RUILIN, MA CHUNLAN, PAN WEN, WU SHUYI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRICITY INDUCTANCES MAGNETS MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSFORMERS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention discloses a preparation method of a two-dimensional material with strong room-temperature ferromagnetism, which comprises the following steps: adhering block crystal ReS2 to a first adhesive tape, stripping to obtain a first adhesive tape with a ReS2 layer, adhering a second adhesive tape to the first adhesive tape, stripping to obtain a second adhesive tape with a ReS2 layer, peeling off the second adhesive tape from a silicon substrate, and drying to obtain the two-dimensional material with strong room-temperature ferromagnetism. Obtaining a silicon wafer with few layers of rhenium disulfide; putting the silicon wafer coated with the few layers of rhenium disulfide into a plasma processing system, vacuumizing, introducing argon, and opening plasma at the temperature of 290-310 K; and putting the few layers of rhenium disulfide subjected to plasma treatment into a quartz boat, preserving heat for 30-60 minutes, and naturally cooling to room temperature to obtain the two-dimensional material of