Spinel sulfide thin film material and preparation method thereof

The invention discloses a preparation method of a spinel sulfide single-crystal epitaxial film. The preparation method comprises the following steps: (1) taking CoS powder, Ni3S2 powder and S powder as target raw materials, and performing grinding, tabletting and vacuum tube sealing high-temperature calcination; (2) respectively cleaning the YSZ substrate for 5 minutes by using acetone, alcohol and deionized water; (3) putting the fired target material and the cleaned YSZ substrate into a pulse laser deposition system together; and (4) growing the single crystal NiCO2S4 film by regulating and controlling the growth temperature and the laser energy density. The NiCO2S4 single crystal thin film is prepared for the first time through the technology used in the invention, and good conditions are provided for exploring the physical properties of the material in electrical transportation, magnetism and the like. 本发明公开了一种尖晶石类硫化物单晶外延薄膜的制备方法，包括以下步骤：(1)将CoS粉末、Ni3S2粉末、S粉作为靶材原料进行研磨，压片以及真空封管高温煅烧；(2)使用丙酮、酒精、去离子水各清洗YSZ基片5mi