Megasonic cleaning process for silicon carbide wafer

The invention relates to a megasonic cleaning process for a silicon carbide wafer, which comprises the following steps of: placing the silicon carbide wafer to be cleaned in rotary megasonic cleaning equipment, and performing intermittent megasonic cleaning by using a cleaning solution; and cleaning the silicon carbide wafer after megasonic cleaning with pure water, drying, packaging and storing. Under megasonic cleaning with the frequency of 2000 KHz, the silicon carbide wafer can be cleaned up only by 7.7 min, the cleaning efficiency is high (existing megasonic cleaning is at least 20 min), the cleaning effect is good, damage to the surface of the silicon carbide wafer can be reduced to the maximum extent, the application value is high, and the implementation effect is good. 本发明涉及一种碳化硅晶片兆声清洗工艺，先将待清洗的碳化硅晶片置于旋转式兆声波清洗设备，并利用清洗液进行间歇式兆声清洗；对经过兆声清洗后的碳化硅晶片使用纯水进行清洗、烘干、封装并储存。本发明对碳化硅晶片在频率为2000KHz的兆声清洗下，只需清洗7.7min即可清洗干净，清洗效率高(现有兆声清洗最少20min)，清洗效果好，能够最大限度降低对碳化硅晶片表面的损伤，应用价值高，实施效果好。