Semiconductor element and forming method thereof

The invention discloses a semiconductor element and a forming method thereof. The semiconductor element comprises a substrate; the semiconductor structure is suspended above the substrate and comprises a source electrode region, a drain electrode region and a channel region arranged between the source electrode region and the drain electrode region. The channel region includes a doped two-dimensional (2D) material layer including a first portion on an upper surface of the channel region. The semiconductor element also includes an interface layer surrounding the channel region including the first portion of the doped 2D material layer; and a gate electrode, the gate electrode surrounding the interface layer. 一种半导体元件及其形成方法，半导体元件包括：一基板；一半导体结构，该半导体结构悬浮在该基板上方且包含一源极区域、一漏极区域及设置于该源极区域与该漏极区域之间的一通道区域。该通道区域包括一掺杂二维(2D)材料层，该掺杂2D材料层包含在该通道区域的一上表面上的一第一部分。该半导体元件亦包括：一界面层，该界面层围绕包括该掺杂2D材料层的该第一部分的该通道区域；及及一栅极电极，该栅极电极围绕该界面层。