Method of depositing layer, deposition system and method of replacing window of deposition system

A method of depositing a layer on a semiconductor workpiece is disclosed. The method includes: placing a semiconductor workpiece on a wafer chuck in a processing chamber; introducing a first precursor into the processing chamber; introducing a second precursor into the processing chamber; and applying radiation to the semiconductor workpiece while the second precursor is in the processing chamber, thereby heating the surface of the semiconductor workpiece. The method also includes applying a bias voltage to the wafer chuck while the second precursor is in the processing chamber. A deposition system and a method of replacing a window of a deposition system are also disclosed. According to the invention, film deposition can be carried out at low temperature. 本发明公开一种在半导体工件上沉积层的方法。方法包含：将半导体工件放置在处理腔室中的晶片卡盘上；将第一前体引入到处理腔室中；将第二前体引入到处理腔室中；以及当第二前体在处理腔室中时，将辐射施加到半导体工件，由此加热半导体工件的表面。方法还包含当第二前体在处理腔室中时，将偏置电压施加到晶片卡盘。本发明公开还一种沉积系统及替换沉积系统的窗口的方法。本发明能够在低温下进行膜沉积。