Orthogonal frequency dividing circuit and working method thereof, and latch with CMOS (complementary metal oxide semiconductor) structure

The invention relates to an orthogonal frequency dividing circuit, a working method thereof and a latch with a CMOS (Complementary Metal Oxide Semiconductor) structure, the orthogonal frequency dividing circuit comprises a first latch and a second latch, the first latch and the second latch both comprise a first pseudo-inverting latch, a second pseudo-inverting latch and a bistable circuit, the first pseudo-inverting latch comprises a first PMOS (P-channel Metal Oxide Semiconductor) transistor, a first CMOS (Complementary Metal Oxide Semiconductor) transistor and a first NMOS (N-channel Metal Oxide Semiconductor) transistor, and the second pseudo-inverting latch comprises a second PMOS transistor, a second CMOS transistor and a second NMOS transistor. The first latch and the second latch both comprise CMOS structures, so that the orthogonal frequency dividing circuit is high in integration level, low in power consumption in work and low in cost. 一种正交分频电路及其工作方法、CMOS结构的锁存器，其中，正交分频电路包括：第一锁存器和第二锁存器，所述第一锁存器和第二锁存器均