Method and device for adjusting semiconductor heterogeneous interface components

The invention discloses a semiconductor heterogeneous interface component adjusting method and device, and the method comprises the steps: carrying out the preprocessing of a plurality of groups of superlattice growth test results, and generating a plurality of relation data between superlattice int...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG JUN, TAN SHAOYANG, CHENG YANG, FANG YANHAN, ZHAO WU, GUO YINTAO, XIA MINGYUE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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