Method and device for adjusting semiconductor heterogeneous interface components

The invention discloses a semiconductor heterogeneous interface component adjusting method and device, and the method comprises the steps: carrying out the preprocessing of a plurality of groups of superlattice growth test results, and generating a plurality of relation data between superlattice int...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	WANG JUN, TAN SHAOYANG, CHENG YANG, FANG YANHAN, ZHAO WU, GUO YINTAO, XIA MINGYUE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention discloses a semiconductor heterogeneous interface component adjusting method and device, and the method comprises the steps: carrying out the preprocessing of a plurality of groups of superlattice growth test results, and generating a plurality of relation data between superlattice interface thin layer components and superlattice interface thin layer thicknesses; based on the thickness of the current superlattice interface thin layer, generating a current superlattice interface thin layer component by utilizing the relation data between the plurality of superlattice interface thin layer components and the thickness of the superlattice interface thin layer; obtaining component atomic flow and current superlattice interface thin layer growth time, and determining a time interval of introducing the source material into the reaction chamber based on the current superlattice interface thin layer component, the component atomic flow and the current superlattice interface thin layer growth time; and ad