Semiconductor device structure and manufacturing method thereof

A semiconductor device structure and a method of manufacturing the same are provided. The semiconductor device structure includes: a substrate; a plurality of sidewall spacers on the substrate; a gate structure on the substrate and between the plurality of sidewall spacers, in which the gate structure includes: a gate dielectric layer conformally on side surfaces of the plurality of sidewall spacers and on the substrate between the plurality of sidewall spacers; the work function layer is correspondingly located on the gate dielectric layer; the metal electrode is located on the work function layer; the nitride layer covers the work function layer and/or the metal electrode; and a plurality of source/drain regions in the substrate on opposite sides of the gate structure. 提供了一种半导体装置结构及其制造方法。此半导体装置结构包括：基板；多个侧壁间隔物，位于基板上；栅极结构，位于基板上，且位于上述多个侧壁间隔物之间，其中栅极结构包括：栅极介电层，顺应性位于上述多个侧壁间隔物的侧表面上以及位于上述多个侧壁间隔物之间的基板上；功函数层，顺应性位于栅极介电层上；金属电极，位于功函数层上；及氮化物层，覆盖功函数层及/或金属电极；以及多个源极/漏极区，位于栅极结构的相对侧的基板中。