Method for patterning and thinning two-dimensional tellurene
The invention discloses a method for patterning and thinning two-dimensional tellurene. The method comprises the following steps: (1) transferring two-dimensional tellurene which is prepared in advance to a target substrate; (2) spin-coating electron beam photoresist on the two-dimensional tellurene...
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| creator | LI JUANJUAN YAO JINRONG GAO LENAN LI XINJIAN WU ZHAI LIN PEI CHEN FANGFANG |
| description | The invention discloses a method for patterning and thinning two-dimensional tellurene. The method comprises the following steps: (1) transferring two-dimensional tellurene which is prepared in advance to a target substrate; (2) spin-coating electron beam photoresist on the two-dimensional tellurene surface in the target substrate, baking, and patterning the electron beam photoresist by using an electron beam exposure method; (3) soaking the obtained two-dimensional tellurene of the patterned electron beam photoresist in an oxidant solution, and selectively etching and thinning the two-dimensional tellurene exposed in the patterned region; and (4) removing the electron beam photoresist on the surface of the two-dimensional tellurium ene by using an organic solvent, washing by using deionized water, and finally drying the washed two-dimensional tellurium ene at a certain temperature to obtain the patterned thinned two-dimensional tellurium ene. The thinning method is easy to operate, green, economical and suit |
| format | Patent |
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The method comprises the following steps: (1) transferring two-dimensional tellurene which is prepared in advance to a target substrate; (2) spin-coating electron beam photoresist on the two-dimensional tellurene surface in the target substrate, baking, and patterning the electron beam photoresist by using an electron beam exposure method; (3) soaking the obtained two-dimensional tellurene of the patterned electron beam photoresist in an oxidant solution, and selectively etching and thinning the two-dimensional tellurene exposed in the patterned region; and (4) removing the electron beam photoresist on the surface of the two-dimensional tellurium ene by using an organic solvent, washing by using deionized water, and finally drying the washed two-dimensional tellurium ene at a certain temperature to obtain the patterned thinned two-dimensional tellurium ene. 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The method comprises the following steps: (1) transferring two-dimensional tellurene which is prepared in advance to a target substrate; (2) spin-coating electron beam photoresist on the two-dimensional tellurene surface in the target substrate, baking, and patterning the electron beam photoresist by using an electron beam exposure method; (3) soaking the obtained two-dimensional tellurene of the patterned electron beam photoresist in an oxidant solution, and selectively etching and thinning the two-dimensional tellurene exposed in the patterned region; and (4) removing the electron beam photoresist on the surface of the two-dimensional tellurium ene by using an organic solvent, washing by using deionized water, and finally drying the washed two-dimensional tellurium ene at a certain temperature to obtain the patterned thinned two-dimensional tellurium ene. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | Method for patterning and thinning two-dimensional tellurene |
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