Method for patterning and thinning two-dimensional tellurene

The invention discloses a method for patterning and thinning two-dimensional tellurene. The method comprises the following steps: (1) transferring two-dimensional tellurene which is prepared in advance to a target substrate; (2) spin-coating electron beam photoresist on the two-dimensional tellurene surface in the target substrate, baking, and patterning the electron beam photoresist by using an electron beam exposure method; (3) soaking the obtained two-dimensional tellurene of the patterned electron beam photoresist in an oxidant solution, and selectively etching and thinning the two-dimensional tellurene exposed in the patterned region; and (4) removing the electron beam photoresist on the surface of the two-dimensional tellurium ene by using an organic solvent, washing by using deionized water, and finally drying the washed two-dimensional tellurium ene at a certain temperature to obtain the patterned thinned two-dimensional tellurium ene. The thinning method is easy to operate, green, economical and suit