Integrated circuits, memory circuits, methods for forming integrated circuits, and methods for forming memory circuits

The invention relates to an integrated circuit, a memory circuit, a method for forming an integrated circuit, and a method for forming a memory circuit. A method for forming an integrated circuit includes forming horizontally spaced conductive vias over a substrate. A conductive material is formed directly over and directly against the conductive via. The conductive material is patterned to form individual conductive lines that are individually directly over a plurality of the conductive vias spaced longitudinally along the respective individual conductive lines. The patterning forms the individual conductive lines to have longitudinally alternating wider and narrower regions. The wider regions are directly above and directly against individual top surfaces of the conductive vias, and are wider in a horizontal cross-section at the top surfaces relative to the narrower regions in the horizontal cross-section. The narrower regions are longitudinally between the wider regions. Other embodiments including structu