Encapsulation material and encapsulation method for piezoresistor

The invention discloses an encapsulating material for a piezoresistor and an encapsulating method. The encapsulating material for the piezoresistor disclosed by the invention is prepared from the following components: Na3PO4, Zn (H2PO4) 2, Al (H2PO4) 3, FeCl3 and H3PO4. The encapsulating method of the piezoresistor comprises the following steps: 1) mixing Na3PO4, Zn (H2PO4) 2, Al (H2PO4) 3 and water, and then adding FeCl3 and H3PO4 to obtain an encapsulating solution; and 2) soaking the piezoresistor in the encapsulation liquid, and sintering to obtain the piezoresistor containing the encapsulation layer. The encapsulating material disclosed by the invention is simple in composition and low in cost, the piezoresistor containing the encapsulating layer can be efficiently prepared in batches, the encapsulating layer has the advantages of good corrosion resistance, uniformity and difficulty in'overplating ', and the yield of the piezoresistor is high. 本发明公开了一种用于压敏电阻器的包封材料及包封方法。本发明的用于压敏电阻器的包封材料的组成包括：Na3PO4、Zn(H2P