INTEGRATED ASSEMBLY AND METHOD OF FORMING AN INTEGRATED ASSEMBLY

Some embodiments include integrated assemblies and methods of forming integrated assemblies. A channel material pillar is disposed within the memory region and a conductive pillar is disposed within the other region. A source structure is coupled to a lower region of the channel material pillar. A panel extends across the memory region and the other region. A doped semiconductor material is proximate to the panel within the memory region and the other region. The doped semiconductor material is at least a portion of the source structure within the memory region. A liner is proximate to and laterally surrounds the conductive pillar. The liner is between the conductive pillar and the doped semiconductor material. Some embodiments include methods of forming an integrated assembly. 一些实施例包含集成式组合件和形成集成式组合件的方法。沟道材料柱布置在存储器区内，且导电柱布置在所述另一区内。源极结构耦合到所述沟道材料柱的下部区。面板跨所述存储器区和所述另一区延伸。掺杂半导体材料在所述存储器区和所述另一区内紧邻所述面板。所述掺杂半导体材料是所述存储器区内的所述源极结构的至少部分。衬里紧邻所述导电柱且横向环绕所述导电柱。所述衬里在所述导电柱和所述掺杂半导体材料之间。一些实施例包含形成集成式组合件的方法。