Formation method of semiconductor structure

A method for forming a semiconductor structure comprises the following steps: providing a substrate which comprises a first region and a second region, and forming an interlayer dielectric layer with a gate opening on the substrate; a shielding layer covering the gate opening of the second region and exposing the gate opening of the first region is formed, and the shielding layer occupies the gate opening of the second region, so that in the step of forming a first work function material layer in the gate opening of the first region, the first work function material layer is formed on the shielding layer; in the process of removing the shielding layer and the first work function material layer located on the shielding layer, the removal process window of the first work function material layer in the second area is large, residues do not exist easily, the removal efficiency is high, and the yield can be improved. Besides, a removal process window of the shielding layer is large, residues do not exist easily, t