Formation method of semiconductor structure

A method for forming a semiconductor structure comprises the following steps: providing a layer to be etched; a core layer is formed on the to-be-etched layer, a plurality of first openings are formed in the core layer, and the first openings expose part of the surface of the to-be-etched layer; a sacrificial layer is formed in the first opening, the sacrificial layer exposes the surface of the core layer, the surface of the sacrificial layer is flush with the surface of the core layer, the material of the sacrificial layer is different from that of the core layer, and the material of the sacrificial layer is different from that of the surface of the layer to be etched; forming a liner material layer on the sacrificial layer and the core layer; and forming a patterned layer on the liner material layer, wherein the patterned layer exposes part of the surface of the liner material layer. The performance of the semiconductor structure formed by the method is improved. 一种半导体结构的形成方法，包括：提供待刻蚀层；在待刻蚀层上形成核心层，所述核心层内具有若