Manufacturing method of PMOS with HKMG

The invention discloses a manufacturing method of a PMOS (P-channel Metal Oxide Semiconductor) with an HKMG (High Kernel Metal Oxide Semiconductor). A gate structure of the PMOS is formed by the following steps of: 1, forming a gate dielectric layer; 2, growing a P-type work function metal layer, wherein the grown P-type work function metal layer is of a polycrystalline structure; 3, performing annealing treatment to enable grains of the polycrystalline structure of the P-type work function metal layer to be mutually combined so as to reduce the number of the grains of the polycrystalline structure and increase the blocking effect on metal diffusion of the metal conductive material layer; 4, forming a top barrier layer; and 5, forming a metal conductive material layer. According to the invention, downward diffusion of metal of the metal conductive material layer can be reduced, and the threshold voltage of the device is kept stable. 本发明公开了一种具有HKMG的PMOS的制造方法，PMOS的栅极结构形成步骤包括：步骤一、形成栅介质层；步骤二、生长P型功函数金属层，生长的所述P型功函数