Method for performing semiconductor etching by using high-purity hexafluoroethane

The invention relates to the field of semiconductor devices, and discloses a method for performing semiconductor etching by using high-purity hexafluoroethane, which comprises the following steps of: drying hexafluoroethane raw material gas, introducing the dried gas into an adsorber with a special structure for adsorption and impurity removal, and sequentially performing liquefaction and rectification purification to obtain the high-purity hexafluoroethane, and after plasma is formed by etching gas containing high-purity hexafluoroethane, dry etching is carried out on the semiconductor substrate covered with the patterned mask. According to the invention, the adsorber with a special structure is adopted to perform adsorption and impurity removal on the hexafluoroethane dry gas, and the distribution uniformity of the dry gas in the adsorber can be improved, so that the adsorption and impurity removal effect is improved, the hexafluoroethane with higher purity can be obtained, and the influence of impurities i