Substrate processing apparatus, method of manufacturing semiconductor device, substrate processing method, and storage medium

The invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, a substrate processing method, and a storage medium. In-plane uniformity of substrate processing is improved. The substrate processing apparatus includes: a processing container configured to perform plasma excitation of a processing gas; a gas supply system that supplies a processing gas into the processing container; and a coil that is provided so that a section between the first ground point and the second ground point is spirally wound around the outer periphery of the processing container for a plurality of circles, and that is supplied with high-frequency power, the coil being configured so that, in a first winding section that is a section that is wound around the outer periphery of the processing container for one circle in a direction from the first ground point toward the second ground point, the first winding section is wound around the outer periphery of the processing container. A coil spa