Wet etching method for crystalline silicon inverted pyramid structure and positive pyramid structure
The invention discloses a texturing method for etching a crystalline silicon inverted pyramid structure and a crystalline silicon positive pyramid structure by wet etching, which belongs to the technical field of new materials and solar energy, and comprises the following steps of: (1) putting a cry...
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| creator | HUO CHENLIANG |
| description | The invention discloses a texturing method for etching a crystalline silicon inverted pyramid structure and a crystalline silicon positive pyramid structure by wet etching, which belongs to the technical field of new materials and solar energy, and comprises the following steps of: (1) putting a crystalline silicon wafer with a clean surface into a container containing treating fluid; (2) reacting at 20 DEG C for 10 minutes to corrode a large-area micro-nano inverted pyramid structure suede on the surface of the silicon wafer; (3) reacting at 20 DEG C for 20 minutes to corrode a large-area micro-nano positive pyramid structure suede on the surface of the silicon wafer; and (4) soaking the corroded silicon wafer in an aqua regia solution to remove residual metal on the surface. The amount of copper deposition on the surface of the silicon wafer corroded by the method is extremely small, and the corroded micro-nano inverted pyramid structure is macroscopically uniform, has a smooth microscopic surface and has f |
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(2) reacting at 20 DEG C for 10 minutes to corrode a large-area micro-nano inverted pyramid structure suede on the surface of the silicon wafer; (3) reacting at 20 DEG C for 20 minutes to corrode a large-area micro-nano positive pyramid structure suede on the surface of the silicon wafer; and (4) soaking the corroded silicon wafer in an aqua regia solution to remove residual metal on the surface. The amount of copper deposition on the surface of the silicon wafer corroded by the method is extremely small, and the corroded micro-nano inverted pyramid structure is macroscopically uniform, has a smooth microscopic surface and has f</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Wet etching method for crystalline silicon inverted pyramid structure and positive pyramid structure |
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