Wet etching method for crystalline silicon inverted pyramid structure and positive pyramid structure

The invention discloses a texturing method for etching a crystalline silicon inverted pyramid structure and a crystalline silicon positive pyramid structure by wet etching, which belongs to the technical field of new materials and solar energy, and comprises the following steps of: (1) putting a crystalline silicon wafer with a clean surface into a container containing treating fluid; (2) reacting at 20 DEG C for 10 minutes to corrode a large-area micro-nano inverted pyramid structure suede on the surface of the silicon wafer; (3) reacting at 20 DEG C for 20 minutes to corrode a large-area micro-nano positive pyramid structure suede on the surface of the silicon wafer; and (4) soaking the corroded silicon wafer in an aqua regia solution to remove residual metal on the surface. The amount of copper deposition on the surface of the silicon wafer corroded by the method is extremely small, and the corroded micro-nano inverted pyramid structure is macroscopically uniform, has a smooth microscopic surface and has f