Method for manufacturing semiconductor element

The invention discloses a method for manufacturing a semiconductor element. The method includes providing a substrate, the substrate including an MRAM region and a logic region, then forming a magnetic tunnel junction (MTJ) on the MRAM region, forming an upper electrode on the MTJ, and then performing a flowable chemical vapor deposition (FCVD) fabrication process to form a first intermetallic dielectric layer surrounding the upper electrode and the MTJ. 本发明公开一种制作半导体元件的方法。首先提供一基底，该基底包含一MRAM区域以及一逻辑区域，然后形成一磁性隧穿结(magnetic tunnelingjunction,MTJ)于MRAM区域上，形成一上电极于MTJ上，再进行一可流动式化学气相沉积(flowable chemical vapor deposition,FCVD)制作工艺以形成一第一金属间介电层环绕上电极以及MTJ。