Tri-state content addressable memory and two-port static random access memory

The invention discloses a tri-state content addressable memory and a dual-port static random access memory. The tri-state content addressable memory includes a memory cell and two transistors. The memory cell includes a first active region, a second active region, a third active region and a fourth active region extending along a first direction, and a first gate line, a second gate line, a third gate line and a fourth gate line extending along a second direction. The first gate line crosses the third active region and the fourth active region, the second gate line crosses the fourth active region, the third gate line crosses the first active region, and the fourth gate line crosses the first active region and the second active region. The transistor is electrically connected to the memory cell, wherein the transistor and the memory cell are arranged along a first direction. 本发明公开一种三态内容可定址存储器与双端口静态随机存取存储器，其包括存储单元以及两晶体管。存储单元包括沿着第一方向延伸的第一主动区、第二主动区、第三主动区与第四主动区、以及沿着第二方向延伸的第一栅极线、第二栅极线、第三栅极线与第四栅极线。第一栅极线横跨第三主动区与第四主动