METHOD FOR SEPARING A SEMICONDUCTOR WAFER

A method of singulating a semiconductor wafer includes: forming one or more epitaxial layers on the semiconductor wafer; forming a plurality of device structures in the one or more epitaxial layers; forming a metallization layer and/or a passivation layer over the plurality of device structures; attaching a carrier to a semiconductor wafer having one or more epitaxial layers, the carrier protecting the plurality of device structures and mechanically stabilizing the semiconductor wafer; forming a separation region within the semiconductor wafer, the separation region having at least one altered physical property that increases a thermal mechanical stress within the separation region relative to the remainder of the semiconductor wafer; and applying an external force to the semiconductor wafer such that the at least one crack propagates along the separation zone and the semiconductor wafer is divided into two separate workpieces, one of which holds a plurality of device structures. 一种分割半导体晶片的方法，包括：在半导体晶片上形成一个或多