Manufacturing method of bidirectional silicon controlled rectifier and bidirectional silicon controlled rectifier

The invention relates to a manufacturing method of a bidirectional silicon controlled rectifier, which comprises the following steps of: selecting an N-type monocrystalline silicon material sheet, growing an oxide layer of more than 2.0 microns on the N-type monocrystalline silicon material sheet, etching front and back isolation patterns by using a double-sided photoetching machine, removing the unnecessary oxide layer by using a chemical corrosive liquid to corrode an isolation region, depositing a P-type impurity source on the isolation region, and forming the P-type impurity source on the N-type monocrystalline silicon material sheet. And then performing high-temperature diffusion to form a sixth P-type layer, and forming a P-type voltage dividing ring on the front surface of the wafer by photoetching and injection methods under the injection condition of 1% of the injection dosage of the base region, different from the prior art, the technical scheme can enable a product to have better dv/dt expression b