Phase change memory and manufacturing method thereof

A phase change memory (1) includes a lower electrode (20), a heater (30), a phase change layer (50), and an upper electrode (70). The heater (30) is coupled to the lower electrode (20). The phase change layer (50) is formed over the heater (30), and the phase change layer (50) is coupled to the heater (30). The upper electrode (70) is disposed in the recess (510) of the phase change layer (50), and the upper electrode (70) is coupled to the phase change layer (50). 一种相变化存储器(1)，包括下电极(20)、加热器(30)、相变化层(50)以及上电极(70)。加热器(30)耦接于下电极(20)。相变化层(50)形成于加热器(30)上方，且相变化层(50)耦接于加热器(30)。上电极(70)设置于相变化层(50)的凹槽(510)内，且上电极(70)耦接于相变化层(50)。