Combined near-infrared and mid-infrared sensor in chip scale package

A sensor with a core chip scale package form factor is described herein. For example, a non-vacuum packaged sensor chip described herein includes a substrate and a sensing element disposed on the substrate. The sensing element is configured to change resistance as a function of temperature. In addition, the non-vacuum packaged sensor chip includes an absorbing layer configured to absorb mid-infrared ("MIR") radiation. 本文描述了一种具有芯芯片级封装形状系数的传感器。例如，本文描述的非真空封装的传感器芯片包括基板和布置在所述基板上的感测元件。所述感测元件被配置成随着温度改变电阻。此外，所述非真空封装的传感器芯片包括被配置成吸收中红外("MIR")辐射的吸收层。