Selective deposition of passivation films

Selective deposition methods are described. An exemplary method includes exposing a substrate including a first surface and a second surface to an anchoring reactant; and selectively depositing an anchoring reactant on the first surface as a seed layer, wherein the anchoring reactant comprises an et...

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Bibliographische Detailangaben
Hauptverfasser:	LEONI, ANDREA, DORIN WEIYING YONG, WANG YONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	Selective deposition methods are described. An exemplary method includes exposing a substrate including a first surface and a second surface to an anchoring reactant; and selectively depositing an anchoring reactant on the first surface as a seed layer, wherein the anchoring reactant comprises an ethynyl derivative having a head group that selectively targets the first surface. 描述了选择性沉积方法。示例性方法包括：将包括第一表面和第二表面的基板暴露于锚定反应物；和将锚定反应物选择性地沉积在第一表面上作为种晶层，其中所述锚定反应物包括具有选择性地靶向所述第一表面的头基的乙炔基衍生物。