Semiconductor structure and forming method thereof

Some embodiments relate to a semiconductor structure including a semiconductor substrate and n interconnect structures disposed over the semiconductor substrate. The interconnect structure includes a dielectric structure and a plurality of metal lines stacked on each other in the dielectric structure. A through substrate via (TSV) extends through the semiconductor substrate to contact a metal line of the plurality of metal lines. A protective jacket is disposed along the outer sidewall of the TSV and separates the outer sidewall of the TSV from the dielectric structure of the interconnect structure. The embodiment of the invention also relates to a method for forming the semiconductor structure. 一些实施例涉及半导体结构，该半导体结构包括半导体衬底以及设置在半导体衬底上方的n个互连结构。互连结构包括介电结构和在介电结构中彼此堆叠的多个金属线。衬底通孔(TSV)延伸穿过半导体衬底以接触多个金属线中的金属线。保护套沿着TSV的外侧壁设置，并且将TSV的外侧壁与互连结构的介电结构分开。本申请的实施例还涉及形成半导体结构的方法。