Switch capable of reducing parasitic inductance

The invention provides a switch capable of reducing parasitic inductance. The switch capable of reducing parasitic inductance comprises a semiconductor element, a first top layer wire and a second top layer wire. Wherein the second top-layer wire is used for electrically connecting the power input e...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YOU KUNHUANG, YANG DAYONG, HU YONGZHONG, WENG WUDE, LIAO TINGWEI, CHEN JIANYU, QIU JIANWEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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