Switch capable of reducing parasitic inductance

The invention provides a switch capable of reducing parasitic inductance. The switch capable of reducing parasitic inductance comprises a semiconductor element, a first top layer wire and a second top layer wire. Wherein the second top-layer wire is used for electrically connecting the power input end and the current inflow end of the semiconductor element, and the first part of the first top-layer wire and the second part of the second top-layer wire are arranged in parallel and adjacently. When the semiconductor element is conducted, the input current flows out from the power input end and is divided into a first current and a second current. Wherein the first current and the second current respectively flow through the first part and the second part, and when the first current and the second current respectively flow through the first part and the second part, the first current and the second current are opposite to each other, so as to reduce a first superposition parasitic inductance of the first top lay