Plasma enhanced chemical vapor deposition equipment
The invention discloses plasma enhanced chemical vapor deposition equipment, and relates to the technical field of semiconductor film preparation, the plasma enhanced chemical vapor deposition equipment comprises a reaction chamber, a controllable heating module, a muffle, a crystal boat and a gas c...
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creator | GAO ZHENLAN HU CHENG WEI XIANG LONG ZEYU |
description | The invention discloses plasma enhanced chemical vapor deposition equipment, and relates to the technical field of semiconductor film preparation, the plasma enhanced chemical vapor deposition equipment comprises a reaction chamber, a controllable heating module, a muffle, a crystal boat and a gas conveying pipeline, the controllable heating module is used for controlling the reaction temperature in the reaction chamber, the muffle is arranged in the reaction chamber, and the inner side of the muffle is a uniform heat area; the wafer boat is arranged in the uniform heat area, the wafer boat comprises a plurality of graphite boat sheets connected with electrodes, and a wafer substrate is placed on the boat sheets; the gas conveying pipeline is used for injecting reaction gas into the reaction chamber, and the reaction chamber is connected with a vacuum pump through an exhaust pipeline; the plasma enhanced chemical vapor deposition equipment disclosed by the invention has the characteristics of high uniformity |
format | Patent |
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the wafer boat is arranged in the uniform heat area, the wafer boat comprises a plurality of graphite boat sheets connected with electrodes, and a wafer substrate is placed on the boat sheets; the gas conveying pipeline is used for injecting reaction gas into the reaction chamber, and the reaction chamber is connected with a vacuum pump through an exhaust pipeline; the plasma enhanced chemical vapor deposition equipment disclosed by the invention has the characteristics of high uniformity</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; 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the wafer boat is arranged in the uniform heat area, the wafer boat comprises a plurality of graphite boat sheets connected with electrodes, and a wafer substrate is placed on the boat sheets; the gas conveying pipeline is used for injecting reaction gas into the reaction chamber, and the reaction chamber is connected with a vacuum pump through an exhaust pipeline; the plasma enhanced chemical vapor deposition equipment disclosed by the invention has the characteristics of high uniformity</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Plasma enhanced chemical vapor deposition equipment |
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