Plasma enhanced chemical vapor deposition equipment

The invention discloses plasma enhanced chemical vapor deposition equipment, and relates to the technical field of semiconductor film preparation, the plasma enhanced chemical vapor deposition equipment comprises a reaction chamber, a controllable heating module, a muffle, a crystal boat and a gas c...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GAO ZHENLAN, HU CHENG, WEI XIANG, LONG ZEYU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses plasma enhanced chemical vapor deposition equipment, and relates to the technical field of semiconductor film preparation, the plasma enhanced chemical vapor deposition equipment comprises a reaction chamber, a controllable heating module, a muffle, a crystal boat and a gas conveying pipeline, the controllable heating module is used for controlling the reaction temperature in the reaction chamber, the muffle is arranged in the reaction chamber, and the inner side of the muffle is a uniform heat area; the wafer boat is arranged in the uniform heat area, the wafer boat comprises a plurality of graphite boat sheets connected with electrodes, and a wafer substrate is placed on the boat sheets; the gas conveying pipeline is used for injecting reaction gas into the reaction chamber, and the reaction chamber is connected with a vacuum pump through an exhaust pipeline; the plasma enhanced chemical vapor deposition equipment disclosed by the invention has the characteristics of high uniformity