Epitaxial tray for improving quality of epitaxial wafer and use method thereof

The invention discloses an epitaxial tray for improving the quality of an epitaxial wafer, and belongs to the technical field of epitaxial growth. The epitaxial tray is a cylinder, the first surface of the epitaxial tray is provided with a plurality of concentric substrate placing rings, and each substrate placing ring comprises a plurality of circular grooves which are uniformly distributed along the circumferential direction of the epitaxial tray. The depth of each circular groove is 1000-1500 micrometers, and a substrate supporting columnar protrusion with the diameter smaller than that of the circular groove is arranged in each circular groove. And the temperature difference of the substrate is reduced, so that warping and sinking of the substrate are reduced, and the temperature uniformity of the substrate is improved, so that the uniformity of an epitaxial wafer growing on the substrate is improved. The space between the circular groove and the substrate supporting columnar protrusion accommodates attac