Threshold value conversion device and preparation method thereof

The invention belongs to the field of semiconductor devices, and discloses a threshold conversion device and a preparation method thereof, the threshold conversion device comprises a bottom electrode, a top electrode and a functional layer located between the bottom electrode and the top electrode; the functional layer is a binary or multi-element metal oxide modified by ion implantation, and active metal nanoparticles are formed inside or on the surface of the functional layer after ion implantation modification; the concentration of ions injected into the functional layer after ion injection modification is in near Gaussian distribution along with the depth of the functional layer; the active metal nanoparticles limit the area where the oxidation-reduction reaction occurs, the randomness of conductive filament growth is reduced, and the consistency of a threshold conversion device is improved; and due to the nanoscale active electrode region, the conductive channel can still maintain the characteristic of s